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    DSAIH000128575.pdf

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    • TOSHIBA MICROWAVE SEMICONDUCTOR MICROWAVE POWER GaAs FET JS8836A-AS TECHNICAL DATA FEATURES: ยท HIGH POWER PjdB = 29.5 dBm at f = 8 GHz HIGH GAIN G1dB = 7 5 dB at f = 8 GHz SUITABLE FOR C-
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