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DSAIH000128574.pdf
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MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEAT URES: HIG H POWER PjdB = 2 4 dBm at f = 8 GHz H IG H GAIN Gjdß -- 8 dB st f -- 8 GHz TOSHIBA MICROW AVE POW ER GaAs FET JS8835-AS SUIT
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ECAD Model
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