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DSAIH000128335.pdf
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TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV322 1 S V3 2 2 TCXO/VCO Unit in mm · · · High Capacitance Ratio Low Series Resistance : C 1V /C 4V = 4.3 (Typ.) : rs = 0.4 fl (Typ.)
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