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N-CHANNEL
POWER MOSFETS
IRF620/621
FEATURES
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Lower R d sio n )
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
L
Scan
No
Unknown
Transferred
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
DSAIHSC00045881.pdf
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