DSAIHSC000145292.pdf

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Partial File Text 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 1
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