DSASW00315217.pdf by ON Semiconductor

Partial File Text MBRS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial co
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case 403-03 MBRS3100 MBRS3100T3 MBRS3100T3G SMC 403-03