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    DSAE0047781.pdf by NEC

    • MOS MOS Field Effect Power Transistors µPA1750 MOS FET MOS FET mm 4 V 8 RDS 1 = 0.09 @VGS = -10 VID = -1.8 A on 5 1 Source1 2 Gate1 7,8Drain1 RDS 2 = 0.18 @VGS
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