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DSAE0046865.pdf
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MOS MOS Field Effect Power Transistors 2SJ494 MOS FET MOS FET mm V 10.0±0.3 RDSon1 = 50 mVGS = -10 V, ID = -10 A 3.2±0.2 4.5±0.2 2.7±0.2 RDSon2 = 88 mVGS = -4 V
Datasheet Type
Original
ECAD Model
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User Tagged Keywords
1094g
2SJ494
682 FET
MEB-504
MOS 4011
PC1094C
TEA 0298
TEI-603
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