DSA00324070.pdf by ON Semiconductor

Partial File Text MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construct
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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MBR1100 MBR1100G MBR1100RL MBR1100RLG