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DSAZSAA00014814.pdf
Manufacturer
American Vacuum Society
Partial File Text
Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metalâinsulatorâmetal capacitor dielectric for GaAs HBT technology Jiro Yota,a) Hon
Datasheet Type
Original
ECAD Model
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