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MOS
MOS Field Effect Power Transistors
ยต PA1703
N MOS FET
NMOS FET
mm
8
5
4 V
1,2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
RDSon1 = 10.5 mVGS = 10 V, ID = 5.0 A
R
