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DSADIGA00020994.pdf
Manufacturer
Efficient Power Conversion
Partial File Text
eGaN® FET DATASHEET EPC2014 EPC2014 â Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 16 mW ID , 10 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown
Datasheet Type
Original
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