DSAISS00031375.pdf by International Rectifier
- IRFHM830DPbF HEXFET® Power MOSFET VDS 30 4.3 (@VGS = 10V) Qg (typical) RG (typical) ID mΩ 13 1.1 RDS(on) max V nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h
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