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DSAISS00031370.pdf
by International Rectifier
Partial File Text
IRFH5301PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN
Datasheet Type
Original
RoHS
Yes
Pb Free
Yes
Lifecycle
Transferred
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IRFH5301PBF
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