DSAISS00031294.pdf
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International Rectifier
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IRLML2803PbF-1
HEXFET® Power MOSFET
VDS
30
0.25
ID
(@TA = 25°C)
nC
1.2
Qg (typical)
Ω
3.3
RDS(on) max
(@VGS = 10V)
V
A
G 1
3 D
S
2
Micro3â¢
Feature
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Original
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