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    DSAISS00031117.pdf by International Rectifier

    • IRGP4263PbF IRGP4263-EPbF   Insulated Gate Bipolar Transistor C   VCES = 650V   G G IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C G VCE(ON) typ. = 1.7V @
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