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DSA0083897.pdf
Manufacturer
STMicroelectronics
Partial File Text
AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction
Datasheet Type
Original
ECAD Model
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User Tagged Keywords
AN1223
Bipolar Junction Transistor
mosfet high power rf ldmos
RF MOSFET CLASS AB
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