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    DSA0083897.pdf

    • STMicroelectronics
    • AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction
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    DSA0083897.pdf preview Download Datasheet

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    AN1223 Bipolar Junction Transistor mosfet high power rf ldmos RF MOSFET CLASS AB
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