DSA2IH00136468.pdf

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Partial File Text Power F-MOS FET 2SK768 Silicon N-channel Power F-MOS FET Features · Low ON re sistan c e R Ds (on) : R Ds (on) = 0 .6 5 ft (typ.) · High sw itching ra te : tt = 90ns (ty p .) · No secondary break
Datasheet Type Scan
ECAD Model

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