DSA00187253.pdf

Partial File Text CEP04N6/CEB04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 4A , RDS(ON)=2.5 @VGS=10V. Super high dense cell design for extremely low RDS(ON).
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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600V,4A DIODE CEP04N6