DSA00187252.pdf by Chino-Excel Technology

Partial File Text CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 2A , RDS(ON)=5 @VGS=10V. Super high dense cell design for extremely low RDS(ON
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RoHS Unknown
Pb Free Unknown
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