DSA0074423.pdf
by Samsung Electronics
- SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate C
- Original
- Unknown
- Unknown
- Obsolete
- Find it at Findchips.com
