DSA0074417.pdf
by Samsung Electronics
- SSH10N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate C
- Original
- No
- Yes
- Active
- Find it at Findchips.com
