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    DSA0074417.pdf

    • Samsung Electronics
    • SSH10N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate C
    • Original
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    DSA0074417.pdf preview Download Datasheet

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    SSF10N80A SSH10N80A

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