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DSA0074133.pdf
Manufacturer
Samsung Electronics
Partial File Text
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSE800/801/803 HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS { TO-126
Datasheet Type
Original
ECAD Model
Part Details
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