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    DSA0074133.pdf

    • Samsung Electronics
    • NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSE800/801/803 HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS { TO-126
    • Original
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    DSA0074133.pdf preview Download Datasheet

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    darlington transistor with built-in temperature c ic 803 kse70 kse800 KSE800 Transistor pc 801 transistor 2A 3v transistor 803
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