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Partial File Text F LC103 WG FUJITSU C-Band Power GaAs FETs FEATURES â¢ â¢ â¢ â¢ â¢ High Output Power: P-|<jB = 30.0dBm(Typ.) High Gain: G ^ b = 8.0dB(Typ.) High PAE: r iadd = 36%(Typ.) Proven Re
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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