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Partial File Text FLM0910-2 FUJITSU Internally Matched Power GaAs FETs FEATURES â¢ High Output Power: P ^ b = 33.5dBm (Typ.) â¢ High Gain: G ^ b = 7.5dB (Typ.) â¢ High PAE: riadd = 31% (Typ.) â¢ Broad Ba
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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