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DSAIHSC000133135.pdf
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FLM ioii-2 m in a li Internally Matched Power GaAs FETs r UJ11ÃU FEATURES ⢠⢠⢠⢠⢠⢠High Output Power: P ^ b = 33.5dBm (Typ.) High Gain: G ^ b = 6.0dB (Typ.) High
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ECAD Model
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