DSAHI00077791.pdf
- IXYS
- High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH20N300 IXBT20N300 VCES = 3000V IC110 = 20A VCE(sat) 3.2V TO-268 (IXBT) G E V V V V A A A A V W °C °C °C °C °C Nm/lb.i
- Original
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