DSA00207972.pdf by IXYS

Partial File Text Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH12N300 IXBT12N300 VCES = 3000V IC110 = 12A VCE(sat) 3.2V TO-247 (IXBH) S
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Pb Free Yes
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ixbh12n300 transistor TO-247 Outline Dimensions