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DSA00315868.pdf
by Hitachi Semiconductor
Partial File Text
4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st. Edition February 1999 Features ยท Low on-resistance N Channel: R DS(on) 0.17 , VGS = 10 V, ID = 4 A P Channe
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4AM17
SP-12