DSA00428650.pdf by Toshiba

Partial File Text 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = -2 V, IC = -1.5 A) · Low saturation vo
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Pb Free Unknown
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2SB148 2SB1481 2SD2241 B1481

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