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    DSAISS00018233.pdf by Infineon Technologies

    • BSZ0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS • 100% avalanche tested 2.1 mW 40 A 28 nC QG(0V..10V) • Very low on-resistance R DS(on) @ V GS
    • Original
    • Yes
    • No
    • Not Recommended
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