DSAISS00018191.pdf by Infineon Technologies

Partial File Text IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 8.6 mW ID â¢ Excellent gate charge x R DS(on) product (FOM) V RDS(on),max â¢ N-channel, normal
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PG-TO220-FP PG-TO220FP