DSAEDA00050455.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features ï· High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MH
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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