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DSAIH000111635.pdf
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*57 T YPE STD 6N 10 SGS-THOMSON m STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss 100 V R D S( o n ) < 0 .4 5 Ü Id 6 A . · . . . . TYPICAL R Ds(on) = 0.35 C
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