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    DSA00314177.pdf

    • Bourns
    • BUL770 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and
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    DSA00314177.pdf preview Download Datasheet

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