DSAH00210769.pdf by Infineon Technologies
- GaAs FET Data Sheet · Low noise (Fmin = 1.4 dB @ 4 GHz) · High gain (11.5 dB typ. @ 4 GHz) · For oscillators up to 12 GHz · For amplifiers up to 6 GHz · Ion implanted planar structure · Chip all gold
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