DSAHI00069785.pdf by Honeywell

Partial File Text HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features Fabricated on S150 Silicon On Insulator (SOI) CMOS Underlayer Technology 150 nm Process (Leff = 130 nm) Total Dose
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