DSA2IH00128038.pdf by Not Available

Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF FEATURES___________________________ · LOW NOISE: Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB
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