DSA2IH00127673.pdf by Not Available

Partial File Text NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · HIGH INSERTION GAIN: 18.5 dB at 500 MHz · LOW NOISE FIGURE: 1.5 dB at 500 MHz · HIGH POWER GAIN: 12 dB at 2 GHz · LARGE DYNAMIC RANGE: 19 dBm at 1 dB
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1A12 nec 2SC2570 NE021 microwave oscillator transistor 2sc2570 xj-05