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    DSA00512648.pdf

    • California Eastern Laboratories
    • NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · · · · · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGUR
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