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DSA2IH00125962.pdf
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PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES__________________________ · HIGH O U T P U T POW ER: 0.5 W · HIGH LINEAR GAIN: 9.5 dB · HIG H EFFICIENC Y (PAE): 38% ·
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ECAD Model
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NEC Microwave Semiconductors
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