BLF145,112 datasheet
by NXP Semiconductors
- HF power MOS transistor - Application: Broadcast and HF Communication transmitters ; Description: HF VDMOS RF POWER Transistor ; Efficiency: 40 %; Frequency: 0 - 28 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 27 dB; Package: SOT123A (CRFM4); Container: Blister pack
- Original
- Yes
- Unknown
- Obsolete
- Find it at Findchips.com
