BLF6G20-110,112 datasheet
by NXP Semiconductors
- Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack
- Original
- Yes
- Unknown
- Obsolete
- Find it at Findchips.com
