BLF6G20-75,112 datasheet
by NXP Semiconductors
- Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 37.5 %; Frequency band: 1930 - 1990 GHz; Mode: CW EDGE ; Output power: 29.5 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack
- Original
- Yes
- Unknown
- Obsolete
- Find it at Findchips.com
