BLF6G20-75 datasheet by NXP Semiconductors
- Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 37.5 %; Frequency band: 1930 - 1990 GHz; Mode: CW EDGE ; Output power: 29.5 W; Package material: SOT502A ; Power gain: 19 dB
- Original
- Yes
- Yes
- Obsolete
-
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