BLF6G20LS-75,112 datasheet by NXP Semiconductors

Description Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 52 %; Frequency band: 1800 - 2000 GHz; Mode: CW / EDGE ; Output power: 63 / 29.5 W; Package material: SOT502B ; Power gain: 19 / 19 dB; Package: SOT502B (LDMOST); Container: Blister pack
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Obsolete
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Equivalent Parts !
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BLF6G20LS-75 934060922118 BLF6G20LS-75,118

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