BLF6G22-180PN,112 datasheet

Manufacturer NXP Semiconductors
Description Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB; Package: SOT539A (LDMOST); Container: Blister pack
Datasheet Type Original
ECAD Model
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BLF6G22-180PN
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BLF6G22-180PN,112 datasheet preview Download Datasheet