BLF6G22-45,112 datasheet by NXP Semiconductors

Description Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Blister pack
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Obsolete
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934060066135 BLF6G22-45,135 BLF6G22-45

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